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ZXTP2012Z датащи(PDF) 2 Page - Diodes Incorporated

номер детали ZXTP2012Z
подробное описание детали  60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP2012Z датащи(HTML) 2 Page - Diodes Incorporated

  ZXTP2012Z_15 Datasheet HTML 1Page - Diodes Incorporated ZXTP2012Z_15 Datasheet HTML 2Page - Diodes Incorporated ZXTP2012Z_15 Datasheet HTML 3Page - Diodes Incorporated ZXTP2012Z_15 Datasheet HTML 4Page - Diodes Incorporated ZXTP2012Z_15 Datasheet HTML 5Page - Diodes Incorporated ZXTP2012Z_15 Datasheet HTML 6Page - Diodes Incorporated ZXTP2012Z_15 Datasheet HTML 7Page - Diodes Incorporated  
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ZXTP2012Z
Datasheet Number: DS33713 Rev. 3 - 2
2 of 7
www.diodes.com
October 2012
© Diodes Incorporated
ZXTP2012Z
A Product Line of
Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-7
V
Continuous Collector Current
IC
-4.3
A
Peak Pulse Current
ICM
-15
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
Linear derating factor
PD
1.5
12
W
mW/°C
Power Dissipation (Note 7)
Linear derating factor
PD
2.1
16.8
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
83
°C/W
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
60
°C/W
Thermal Resistance, Junction to Leads (Note 8)
RθJL
3.23
°C/W
Operating and Storage Temperature Range
TJ,TSTG
-55 to +150
°C
Notes:
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; device
measured when operating in steady state condition.
7. Same as note (6), except the device is mounted on 50mm X 50mm single sided 1oz weight copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).



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