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RFHA3944 датащи(PDF) 1 Page - RF Micro Devices |
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RFHA3944 датащи(HTML) 1 Page - RF Micro Devices |
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1 / 11 page ![]() RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131024 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. RF MICRO DEVICES ® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 11 RFHA3944 65W GaN Wide-Band Power Amplifier The RFHA3944 is a 48V, 65W high power discrete amplifier designed for military communications, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/medical applications. Using a second generation advanced high power density gallium nitride (GaN) semiconductor process with improved linearity, these high- performance amplifiers achieve high efficiency, excellent linearity, and flat gain and power over a broad frequency range in a single amplifier design. The RFHA3944 is an unmatched GaN transistor, packaged in a hermetic flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished by incorporating simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier. Functional Block Diagram Ordering Information RFHA3944S2 Sample bag with 2 pieces RFHA3944SB Bag with 5 pieces RFHA3944SQ Bag with 25 pieces RFHA3944SR Short reel with 50 pieces RFHA3944TR13 13” Reel with 400 pieces RFHA3944PCBA-411 Fully assembled evaluation board optimized for 2.14GHz; 48V Package: Flanged Ceramic, 2 pin, RF360-2 Features ■ Broadband Operation Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz ■ Advanced GaN HEMT Technology ■ Peak Modulated Power > 65W ■ Advanced Heat-Sink Technology ■ 48V Typical Modulated Performance POUT 42.4dBm Gain 14.7dB Drain Efficiency 31% ACP-42dBc ■ 48V Typical CW Performance POUT 48.1dBm Gain 14.5dB Drain Efficiency 55% ■ -40°C to 85°C Operating Temperature Applications ■ Military Communications ■ General Purpose Broadband Amplifiers ■ Electronic Warfare ■ Public Mobile Radios ■ Commercial Wireless Infrastructure ■ Cellular and WiMAX Infrastructure ■ Industrial, Scientific, and Medical RFHA3944 RFHA3944 |
Аналогичный номер детали - RFHA3944 |
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Аналогичное описание - RFHA3944 |
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