RFHA3944 datasheet(2/11 Pages) RFMD

2 / 11 page

RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS131024

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

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® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,

2 of 11

Absolute Maximum Ratings

Parameter

Rating

Unit

Drain Voltage (VD)

150

Gate Voltage (VG)

-8 to +2

Gate Current (IG)

Operational Voltage

Ruggedness (VSWR)

10:1

Storage Temperature Range

-65 to +125

°C

Operating Temperature Range (TL)

-40 to +85

°C

Operating Junction Temperature (TJ)

250

°C

Human Body Model

Class 1B

MTTF (TJ < 200°C, 95% Confidence Limits)*

3.2E + 06

Hours

MTTF (TJ < 250°C, 95% Confidence Limits)*

5.3E + 04

Hours

Thermal Resistance, Rth (junction to case) measured

at TC = 85°C, DC bias only

1.7

°C/W

Caution! ESD sensitive device.

RoHS (Restriction of Hazardous

Substances): Compliant per EU Directive

2011/65/EU.

Exceeding any one or a combination of the Absolute

Maximum Rating conditions may cause permanent

damage to the device. Extended application of Absolute

Maximum Rating conditions to the device may reduce

device reliability. Specified typical performance or

functional operation of the device under Absolute

Maximum Rating conditions is not implied.

* MTTF

– median time to failure for wear-out failure mode (30% I

DSS degradation) which is determined by the technology process reliability.

Refer to product qualification report for FIT (random) failure rate.

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current

must not exceed the maximum operating values specified in the table above.

Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE

Nominal Operating Parameters

Parameter

Specification

Unit

Condition

Min

Typ

Max

Recommended Operating

Conditions

Drain Voltage (VDSQ)

Gate Voltage (VGSQ)

-1.5

-0.9

-0.4

Drain Bias Current (IDSQ)

540

Frequency of Operation

4000

GHz

DC Function Test

IG(OFF) – Gate Leakage

0.02

VG = -8V, VD = 0V

ID(OFF) – Drain Leakage

0.2

VG = -8V, VD = 48V

VGS(TH) – Threshold Voltage

-1.4

VD = 48V, ID = 20mA

VDS(ON) – Drain Voltage at High

Current

0.75

VG = 0V, ID = 1.5A

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