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RFHA1004 датащи(PDF) 1 Page - RF Micro Devices |
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RFHA1004 датащи(HTML) 1 Page - RF Micro Devices |
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1 / 11 page ![]() RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131018 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. RF MICRO DEVICES ® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 11 RFHA1004 25W GaN Wide-Band Power Amplifier 700MHz to 2500MHz The RFHA1004 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, military communication radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single amplifier design. The RFHA1004 is an input matched GaN transistor packaged in an air cavity copper package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. Functional B Functional Block Diagram Ordering Information RFHA1004S2 Sample bag with 2 pieces RFHA1004SB Bag with 5 pieces RFHA1004SQ Bag with 25 pieces RFHA1004SR Short Reel with 100 pieces RFHA1004TR7 7" Reel with 750 pieces RFHA1004PCBA-410 Evaluation Board: 700MHz to 2500MHz; 52V Operation Package: Air-Cavity Cu Features ■ Advanced GaN HEMT Technology ■ Output Power of 25W ■ Advanced Heat-Sink Technology ■ 700MHz to 2500MHz Instantaneous Bandwidth ■ Input Internally Matched to 50 Ω ■ 52V Operation Typical Performance POUT 43dBm Gain 11dB Power Added Efficiency 45% (700MHz to 2500MHz) ■ -40°C to 85°C Operating Temperature ■ Large Signal Models Available ■ EAR99 Export Control Applications ■ Class AB Operation for Public Mobile Radio ■ Power Amplifier Stage for Commercial Wireless Infrastructure ■ General Purpose Tx Amplification ■ Test and Instrumentation ■ Civilian and Military Radar RFHA1004 |
Аналогичный номер детали - RFHA1004 |
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Аналогичное описание - RFHA1004 |
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