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RFHA1004 датащи(PDF) 2 Page - RF Micro Devices |
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RFHA1004 датащи(HTML) 2 Page - RF Micro Devices |
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2 / 11 page ![]() RFHA1004 2 of 11 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131018 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Operational Voltage 54 V RF - Input Power 38 dBm Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (Tc) -40 to +85 °C Operating Junction Temperature (TJ) 200 °C Human Body Model Class 1A MTTF (TJ < 200 °C, 95% Confidence Limits)* 3E + 06 Hours Thermal Resistance, RTH (junction to case) measured at TC = 85 0C, DC bias only 5.2 °C/W Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max Recommended Operating Conditions Drain Voltage (VDSQ) 52 V Gate Voltage (VGSQ) -4 -3.2 -2.5 V Drain Bias Current 88 mA RF Input Power (PIN) 35 dBm Input Source VSWR 10:1 Maximum Gate Current (Ig) 15.25 mA P3dB, CW RF Performance Characteristics Frequency Range 700 2500 MHz Small signal 3dB bandwidth Linear Gain 11.5 dB PIN = 0dBm, 700MHz to 2500MHz Power Gain 10 dB PIN = 33dBm, 700MHz to 2500MHz Gain Variation with Temperature -0.02 dB/ºC Input Return Loss (S11) -10 dB Output Power (P3dB) 43 dBm 700MHz to 2500MHz Power Added Efficiency (PAE) 43 % 700MHz to 2500MHz * MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J - C and TC = TCASE Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE |
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