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STUD2030PLS датащи(PDF) 3 Page - SamHop Microelectronics Corp.

номер детали STUD2030PLS
подробное описание детали  S uper high dense cell design for low R DS (ON).
PDF  9 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD2030PLS датащи(HTML) 3 Page - SamHop Microelectronics Corp.

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Parameter
Symbol
C ondition
Min Typ Max Unit
E LE C TR IC AL C HAR AC TE R IS TIC S (TC=25 C unless otherwise noted)
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
Diode Forward Voltage
VSD
VGS = 0V, Is = -10A
-1.3
V
a
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 2. Trans fer C haracteris tics
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
-ID, Drain C urrent (A)
-V GS , G ate-to-S ource Voltage (V )
3
S T U/D2030P LS
60
50
40
30
20
10
0
-55 C
25 C
20
15
10
5
0
0
0.7
1.4
2.1
2.8
3.5
4.2
Tj=125 C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-55
-25
0
25
125
-0.9
Tj( C )
100
50
75
V GS =-4.5V
ID=-10A
T j, J unction T empera ture ( C )
F igure 1. Output C haracteris tics
-V DS ,Drain-to-S ource Voltage (V )
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
V GS =-5V
V GS =-3V
V GS =-4V
V GS =-4.5V
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
510
15
20
25
0
V GS =-10V
V GS =-4.5V
V GS =-10V
ID=-20A
V GS =-8V
V GS =-10V



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