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STUD2030PLS датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STUD2030PLS
подробное описание детали  S uper high dense cell design for low R DS (ON).
PDF  9 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD2030PLS датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BVDSS
=
VGS 0V, ID -250uA
=
-25
V
Zero Gate Voltage Drain Current
IDSS
VDS -20V, VGS 0V
==
-1
Gate-Body Leakage
IGSS
VGS
20V, VDS 0V
=
=
100 nA
ON CHAR ACTE R IS TICS
a
Gate Threshold Voltage
VGS(th)
VDS VGS,ID = -250uA
=
-1
-3
V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS -10V, ID -20A
VGS -4.5V, ID -10A
On-S tate Drain Current
ID(ON)
VDS =-10V, VGS =-10V
A
S
Forward Transconductance
FS
g
VDS -10V, ID -10A
DYNAMIC CHAR ACTE R IS TICS
b
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =-15V, VGS =0V
f=1.0MHZ
P
F
P
F
P
F
S WITCHING CHAR ACTE R IS TICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = -15V
ID =-1 A
VGS = -10V
R GEN =6 ohm
ns
ns
ns
ns
Total GateCharge(10V)
Gate-S ource Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =-15V, ID =-20A
VGS =-10V
nC
nC
nC
C
Fall Time
=
=
=
=
==
2
5
uA
mohm
mohm
nC
-30
170
250
950
18.5
38.5
68.8
22
10
5.8
1.6
9.6
14
ohm
Rg
Gate resistance
VGS =0V, VDS = 0V, f=1.0MHZ
2.6
S T U/D2030P LS
ELEC TR IC AL C HAR AC TE R ISTIC S (TC=25 C unless otherwise noted)
Total Gate Charge (4.5V)
-1.7
27
41
32
55



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