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STUD660 датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STUD660
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  10 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD660 датащи(HTML) 4 Page - SamHop Microelectronics Corp.

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4
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Rg, Gate Resistance( )
Figure 11. switching characteristics
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
0
1800
1500
1200
900
600
300
0
2
4
68
10
ID=1.5A
25 C
75 C
125 C
1
0
0.3
0.6
0.9
1.2
1.5
25 C
Ω
Ciss
Coss
Crss
180
150
120
90
60
30
0
10
15
20
25
30
0
5
VDS=40V
ID=1.5A
0
10
8
6
4
2
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
110
100
1
10
100
300
VDS=40V,ID=1A
VGS=10V
TD(off )
Tf
TD(on)
Tr
0.1
1
10
100
10
1
0.1
R
DS
(ON)
Li
mit
5
75 C
125 C
Ver 2.1
STU/D660
1m
s
Jan,08,2015
10ms
DC
VGS=10V
Single Pulse
TC=25 C



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