STUD660 datasheet(3/10 Pages) SAMHOP

номер детали	STUD660

подробное описание детали	Super high dense cell design for low RDS(ON).

PDF	10 Pages

Scroll/Zoom	100%

производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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Tj(°

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current(A)

Tj, Junction Temperature(°C)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(°C)

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(°C)

Figure 6. Breakdown Voltage Variation

with Temperature

3.5

2.8

2.1

1.4

0.7

VGS=3.5V

VGS=4V

VGS=10V

VGS=4.5V

3.5

2.8

2.1

1.4

0.7

0.9

5.4

4.5

3.6

2.7

1.8

25 C

Tj=125 C

-55 C

1800

1500

1200

900

600

300

0.7

1.4

2.1

2.8

3.5

VGS=10V

VGS=4.5V

2.0

1.8

1.6

1.4

1.2

1.0

100

125

150

VDS=VGS

ID=250uA

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

-50

-25

100 125 150

ID=250uA

1.15

1.10

1.05

1.00

0.95

0.90

0.85

-50

-25

100 125 150

Ver 2.1

STU/D660

VGS=3V

VGS=5V

2.2

VGS=10V

ID=1.5A

VGS=4.5V

ID=1.3A

Jan,08,2015

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