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STUD618S датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STUD618S
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD618S датащи(HTML) 4 Page - SamHop Microelectronics Corp.

  STUD618S Datasheet HTML 1Page - SamHop Microelectronics Corp. STUD618S Datasheet HTML 2Page - SamHop Microelectronics Corp. STUD618S Datasheet HTML 3Page - SamHop Microelectronics Corp. STUD618S Datasheet HTML 4Page - SamHop Microelectronics Corp. STUD618S Datasheet HTML 5Page - SamHop Microelectronics Corp. STUD618S Datasheet HTML 6Page - SamHop Microelectronics Corp. STUD618S Datasheet HTML 7Page - SamHop Microelectronics Corp. STUD618S Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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STU/D618S
Ver 1.1
www.samhop.com.tw
Nov,06,2009
4
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Rg, Gate Resistance(
Ω)
Figure 11. switching characteristics
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
0.1
1
10
60
100
10
1
0.3
R
DS
(O
N)
Lim
it
VGS=10V
Single Pulse
TA=25 C
Ciss
Coss
Crss
1500
1250
1000
750
500
250
0
10
15
20
25
30
0
5
120
100
80
60
40
20
0
24
6
8
10
0
ID=10.5A
25 C
75 C
125 C
20.0
10.0
1.0
0
0.25
0.50
0.75
1.00
1.25
5.0
25 C
75 C
125 C
10
8
6
4
2
0
VDS=30V
ID=10.5A
03
6
9
12
15
18
21
24
110
100
1
10
100
300
VDS=30V,ID=1A
VGS=10V
Tf
TD(on)
Tr
TD(off )
DC
10
ms
1m
s
100u
s



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