STUD618S datasheet(3/8 Pages) SAMHOP

номер детали	STUD618S

подробное описание детали	Super high dense cell design for low RDS(ON).

PDF	8 Pages

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производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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STU/D618S

Ver 1.1

www.samhop.com.tw

Nov,06,2009

Tj( °

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current(A)

Tj, Junction Temperature(° C)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C)

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(° C)

Figure 6. Breakdown Voltage Variation

with Temperature

0.5

1.0

1.5

2.0

2.5

3.0

VGS=4V

VGS=10V

VGS=4.5V

VGS=3.5V

0.7

4.2

3.5

2.8

2.1

1.4

Tj=125 C

-55 C

25 C

120

100

714

V GS =10V

V GS =4.5V

2.0

1.8

1.6

1.4

1.2

1.0

100

125

150

V GS =10V

ID=10.5A

V GS =4.5V

ID=9.4A

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

-25

-50

V DS =V GS

ID=250uA

1.15

1.10

1.05

1.00

0.95

0.90

0.85

125 150

100

-25

-50

ID=250uA

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