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STUD616S датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STUD616S
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD616S датащи(HTML) 4 Page - SamHop Microelectronics Corp.

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STU/D616S
Ver1.1
www.samhop.com.tw
Feb,12,2010
4
VGS, Gate-Source Voltage (V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VDS, Drain-to Source Voltage (V)
Figure 9. Capacitance
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
Rg, Gate Resistance (
Ω)
Figure 11. Switching Characteristics
VDS, Gate-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Cis s
Cos s
Crs s
1200
1000
800
600
400
200
0
10
15
20
25
30
0
5
240
200
160
120
80
40
0
24
6
8
10
0
25 C
ID=8A
75 C
125 C
20.0
10.0
1.0
0
0.3
0.6
0.9
1.2
1.5
5.0
25 C
125 C
75 C
10
8
6
4
2
0
02
4
6
810
12
14
16
V DS =30V
ID=8A
110
100
1
10
100
300
VDS=30V,ID=1A
VGS=10V
TD(on)
TD(off )
Tf
Tr
0.1
1
10
60
10
1
0.1
0.03
80
VGS=10V
Single Pulse
TA=25 C
R
DS
(O
N)
Limi
t
DC
10m
s
1m
s
100
us



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