STUD616S datasheet(3/8 Pages) SAMHOP

номер детали	STUD616S

подробное описание детали	Super high dense cell design for low RDS(ON).

PDF	8 Pages

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производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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Tj( C )

STU/D616S

Ver1.1

www.samhop.com.tw

Feb,12,2010

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current (A)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Tj, Junction Temperature ( C )

Figure 4. On-Resistance Variation with

Drain Current and Temperature

Tj, Junction Temperature ( C )

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature ( C )

Figure 6. Breakdown Voltage Variation

with Temperature

0.5

1.0

1.5

2.0

2.5

3.0

VGS =3V

VGS =3.5V

VGS =10V

VGS =4V

VGS =4.5V

0.9

5.4

4.5

3.6

2.7

1.8

25 C

-55 C

Tj=125 C

180

150

120

369

V GS =10V

V GS =4.5V

2.5

2.2

1.9

1.6

1.3

1.0

100

125

150

V GS =10V

ID=8A

V GS =4.5V

ID=6A

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

-25

-50

V DS =V GS

ID=250uA

1.15

1.10

1.05

1.00

0.95

0.90

0.85

125 150

100

-25

-50

ID=250uA

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