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STUD421S датащи(PDF) 3 Page - SamHop Microelectronics Corp.

номер детали STUD421S
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD421S датащи(HTML) 3 Page - SamHop Microelectronics Corp.

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Parameter
Symbol
C ondition
Min Typ Max Unit
E LE C TR IC AL C HAR AC TE R IS TIC S (TA=25 C unless otherwise noted)
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
Diode Forward Voltage
VSD
VGS = 0V, Is = -10A
-1.3
V
a
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 2. Trans fer C haracteris tics
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
ID, Drain C urrent (A)
V GS , G ate-to-S ource Voltage (V )
3
S T U/D421S
120
100
80
60
40
20
1
20
16
12
8
0
0
0.6
1.8
2.4
3.2
4.0
4.8
1.5
1.4
1.3
1.2
1.1
1.0
0.0
0
125
-0.91
Tj( C )
100
25
50
T j, J unction T empera ture ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
612
18
24
30
1
V GS =-10V
V GS =-4.5V
V GS =-10V
ID=-10A
4
Tj=125 C
-55 C
150
V GS =-4.5V
ID=-6A
F igure 1. Output C haracteris tics
-V DS , Drain-to-S ource Voltage (V )
30
24
18
12
6
0
0
0.5
1.5
2
2.5
3
V GS =-10V
V GS =-3.5V
V GS =-4.5V
V GS =-8V
V GS =-3V
25 C
75
1



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