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STUD421S датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STUD421S
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD421S датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BVDSS
=
VGS 0V, ID -250uA
=
-40
V
Zero Gate Voltage Drain Current
IDSS
VDS -32V, VGS 0V
==
1
Gate-Body Leakage
IGSS
VGS
20V, VDS 0V
=
=
100 nA
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
VGS(th)
VDS VGS,ID =-250uA
=
-1.0
-3.0
V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS -10V, ID -10A
VGS -4.5V, ID -6A
60
On-S tate Drain Current
ID(ON)
VDS =-5V, VGS =-10V
A
S
Forward Transconductance
FS
g
VDS -10V, ID -10A
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =-20V, VGS =0V
f=1.0MHZ
P
F
P
F
P
F
S WITCHING CHAR ACTE R IS TICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = -24V
ID =-10 A
VGS = -10V
R GEN =3.3 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =-24V, ID =-16A
VGS =-10V
nC
nC
nC
C
Fall Time
=
=
=
=
==
2
5
45
uA
mohm
mohm
P-Channel ELECTR ICAL CHAR ACTER ISTICS (TA 25 C unless otherwise noted)
VDS =-24V, ID =-10A,VGS =-10V
nC
VDS =-24V, ID =-10A,VGS =-4.5V
30
85
135
900
17
26
45
15
12
5
1.8
8
11
ohm
Rg
Gate resistance
VGS =0V, VDS = 0V, f=1.0MHZ
3.5
S T U/D421S
-1.7
34
47



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