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STUD417L датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STUD417L
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD417L датащи(HTML) 4 Page - SamHop Microelectronics Corp.

  STUD417L Datasheet HTML 1Page - SamHop Microelectronics Corp. STUD417L Datasheet HTML 2Page - SamHop Microelectronics Corp. STUD417L Datasheet HTML 3Page - SamHop Microelectronics Corp. STUD417L Datasheet HTML 4Page - SamHop Microelectronics Corp. STUD417L Datasheet HTML 5Page - SamHop Microelectronics Corp. STUD417L Datasheet HTML 6Page - SamHop Microelectronics Corp. STUD417L Datasheet HTML 7Page - SamHop Microelectronics Corp. STUD417L Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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www.samhop.com.tw
Aug,24,2012
4
-VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
-VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
-VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Rg, Gate Resistance(
Ω)
Figure 11. switching characteristics
-VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
STU/D417L
Ver 1.1
0.1
1
10
100
100
10
1
R
DS
(O
N)
Lim
it
VGS=-10V
Single Pulse
TA=25 C
60
50
40
30
20
10
0
24
6
8
10
0
ID=-17A
25 C
125 C
75 C
10
1
20
0
0.3
0.6
0.9
1.2
1.5
Crs s
Cs s
o
2400
2000
1600
1200
800
400
0
10
15
20
25
30
0
5
10
8
6
4
2
0
010
20
30
40
V DS =-20V
ID=-17A
110
100
DC
0.1
1m
s
100u
s
10ms
Cs s
i
125 C
75 C
25 C
10
100
1000
1
VDS=-20V,ID=-1A
VGS=-10V
TD(on)
Tr
TD(off )
Tf



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