STUD417L datasheet(3/8 Pages) SAMHOP

номер детали	STUD417L

подробное описание детали	Super high dense cell design for low RDS(ON).

PDF	8 Pages

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производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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STU/D417L

www.samhop.com.tw

Aug,24,2012

-VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

-VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

-ID, Drain Current(A)

Tj, Junction Temperature(° C)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C)

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(° C)

Figure 6. Breakdown Voltage Variation

with Temperature

Tj( C )

Ver 1.1

0.9

5.4

4.5

3.6

2.7

1.8

Tj=125 C

-55 C

25 C

V GS =10V

V GS =4.5V

1.5

1.4

1.3

1.2

1.1

1.0

100

125

150

V GS =-10V

ID=-17A

V GS =-4.5V

ID=-13A

0.5

1.0

1.5

2.0

2.5

3.0

V GS =-3V

V GS =-4V

V GS =-3.5V

V GS =-10V

V GS =-4.5V

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

-25

-50

V DS =V GS

ID=-250uA

1.15

1.10

1.05

1.00

0.95

0.90

0.85

125 150

100

-25

-50

ID=-250uA

V GS =-5V

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