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STUD413S датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STUD413S
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD413S датащи(HTML) 4 Page - SamHop Microelectronics Corp.

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STU/D413S
Ver 1.1
www.samhop.com.tw
Aug,24,2012
4
120
100
80
60
40
20
0
24
6
8
10
0
ID=-11A
25 C
125 C
75 C
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
20.0
10.0
1.0
125
5.0
0
0.24
0.48
0.72
0.96
1.20
25 C
75 C
125 C
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
1500
1250
1000
750
500
250
0
0
5
10
15
20
25
30
Crs s
Cs s
o
Cs s
i
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
10
8
6
4
2
0
V DS = -20V
ID=-11A
03
6
9
12
15
18
21
24
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100
10
60
600
V DS =-20V, ID=-1A
V G S =-10V
1
1
6 10
60 100
600
300
TD(off)
TD(on)
Tr
Tf
Rg, Gate Resistance(
Ω)
Figure 11. switching characteristics
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
100
10
1
0.1
1
10
40
100
V GS =-10V
Single P uls e
T A=25 C
R
DS
(O
N)
Li
m
it
DC
10m
s
1m
s
100
us



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