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STUD413S датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STUD413S
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD413S датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
-40
V
1
IGSS
±10
uA
VGS(th)
-1
V
38
gFS
10
S
VSD
CISS
895
pF
COSS
138
pF
CRSS
67
pF
Qg
14
nC
14
nC
Qgs
54
nC
Qgd
10
tD(ON)
14.5
ns
tr
2.1
ns
tD(OFF)
3.4
ns
tf
ns
Gate-Drain Charge
VDS=-20V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-20V
ID=-1.0A
VGS=-10V
RGEN=3.3 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=-20V,ID=-11A,VGS=-10V
Fall Time
Turn-On Delay Time
m ohm
VGS=-10V , ID=-11A
VDS=-10V , ID=-11A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=-250uA
VDS=-32V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=-250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=-4.5V , ID=-8.6A
48
58
78
m ohm
f=1.0MHz
VDS=-20V,ID=-11A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS= -2.0A
-0.77
-1.3
V
Notes
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13)
STU/D413S
Ver 1.1
www.samhop.com.tw
Aug,24,2012
2
nC
VDS=-20V,ID=-11A,VGS=-4.5V
7
_
_
b
-1.8
-3
b



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