STUD307S datasheet(3/8 Pages) SAMHOP

номер детали	STUD307S

подробное описание детали	Super high dense cell design for low RDS(ON).

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производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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Jan,29,2010

Tj( °

-VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

-VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

-ID, Drain Current(A)

Tj, Junction Temperature(° C)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C)

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(° C)

Figure 6. Breakdown Voltage Variation

with Temperature

STU/D307S

Ver 1.0

100

0.5

1.0

1.5

2.0

2.5

3.0

VGS = -3V

VGS = -3.5V

VGS = -4V

VGS = -4.5V

VGS = -10V

0.7

4.2

3.5

2.8

2.1

1.4

125 C

-55 C

25 C

100

VGS = -10V

VGS = -4.5V

2.0

1.8

1.6

1.4

1.2

1.0

100

125

150

V GS =-10V

ID= -26.5A

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

-25

-50

V DS =V GS

ID=-250uA

1.15

1.10

1.05

1.00

0.95

0.90

0.85

125 150

100

-25

-50

ID=-250uA

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