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STUD307S датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STUD307S
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD307S датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
1
IGSS
±10
uA
VGS(th)
-1
V
7.5
gFS
52
S
VSD
CISS
3100
pF
COSS
850
pF
CRSS
400
pF
Qg
45
nC
85
nC
Qgs
340
nC
Qgd
150
tD(ON)
75
ns
tr
8
ns
tD(OFF)
22
ns
tf
ns
Gate-Drain Charge
VDS=-15V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-15V
ID=-1.0A
VGS=-10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=-15V,ID=-25A,VGS=-10V
Fall Time
Turn-On Delay Time
m ohm
VGS=-10V , ID=-26.5A
VDS=-5V , ID=-26.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=-250uA
VDS=-24V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=-250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=-4.5V , ID=-21A
9.5
10.5
14
m ohm
f=1.0MHz
VDS=-15V,ID=-25A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS= -12A
-0.8
-1.3
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
www.samhop.com.tw
Jan,29,2010
2
nC
VDS=-15V,ID=-25A,VGS=-4.5V
35
_
_
c
-1.8
-3
Is
Maximum Continuous Drain-Source Forward Current
A
c
-12
_
b
STU/D307S
Ver 1.0



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