STU314D datasheet(3/11 Pages) SAMHOP

номер детали	STU314D

подробное описание детали	Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PDF	11 Pages

Scroll/Zoom	100%

производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

Logo

3 / 11 page

Symbol

Min

Typ

Max

Units

BVDSS

-30

-1

IGSS

±10

VGS(th)

-1

gFS

VSD

CISS

815

COSS

215

CRSS

125

Qgs

Qgd

tD(ON)

15.5

1.7

tD(OFF)

4.7

Gate-Drain Charge

VDS=-15V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=-15V

ID=-1A

VGS=-10V

RGEN=6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=-15V,ID=-14A,VGS=-10V

Fall Time

Turn-On Delay Time

m ohm

VGS=-10V , ID=-14A

VDS=-5V , ID=-14A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS , ID=-250uA

VDS=-24V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

P-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

-3

VGS=-4.5V , ID=-11A

m ohm

f=1.0MHz

VDS=-15V,ID=-14A,

VGS=-10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=-1.7A

-0.77

-1.3

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13)

STU314D

www.samhop.com.tw

Feb,04,2009

VDS=-15V,ID=-14A,VGS=-4.5V

7.3

-1.8

Maximum Continuous Drain-Source Diode Forward Current

-1.7

Ver 1.0

STU314D датащи(PDF) 3 Page - SamHop Microelectronics Corp.

STU314D датащи(HTML) 3 Page - SamHop Microelectronics Corp.

Html Pages

1 2 3 4 5 6 7 8 9 10 11

датащи скачать

ссылки URL