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STU314D датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STU314D
подробное описание детали  Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PDF  11 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STU314D датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
±10
uA
VGS(th)
1
V
22
gFS
25
S
VSD
CISS
505
pF
COSS
105
pF
CRSS
65
pF
Qg
12
nC
11
nC
Qgs
16.6
nC
Qgd
14
tD(ON)
8.8
ns
tr
1.5
ns
tD(OFF)
2.3
ns
tf
ns
Gate-Drain Charge
VDS=15V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=15V,ID=16A,VGS=10V
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=16A
VDS=5V , ID=16A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
N-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=13.7A
28
31
40
m ohm
c
f=1.0MHz
c
VDS=15V,ID=16A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=1.7A
0.8
1.2
V
STU314D
www.samhop.com.tw
Feb,04,2009
2
nC
VDS=15V,ID=16A,VGS=4.5V
4.3
1.9
b
IS
Maximum Continuous Drain-Source Diode Forward Current
A
1.7
Ver 1.0



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