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STT3414 датащи(PDF) 3 Page - SamHop Microelectronics Corp.

номер детали STT3414
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STT3414 датащи(HTML) 3 Page - SamHop Microelectronics Corp.

  STT3414 Datasheet HTML 1Page - SamHop Microelectronics Corp. STT3414 Datasheet HTML 2Page - SamHop Microelectronics Corp. STT3414 Datasheet HTML 3Page - SamHop Microelectronics Corp. STT3414 Datasheet HTML 4Page - SamHop Microelectronics Corp. STT3414 Datasheet HTML 5Page - SamHop Microelectronics Corp. STT3414 Datasheet HTML 6Page - SamHop Microelectronics Corp. STT3414 Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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STT3414
Ver 1.0
www.samhop.com.tw
Aug,23,2011
3
Tj( °
C)
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
ID, Drain Current(A)
Tj, Junction Temperature(° C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Tj, Junction Temperature(° C)
Figure 5. Gate Threshold Variation
with Temperature
Tj, Junction Temperature(° C)
Figure 6. Breakdown Voltage Variation
with Temperature
60
50
40
30
20
10
1
1
V GS =10V
V GS =4.5V
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
125 150
100
75
50
25
0
-25
-50
V DS =V GS
ID=250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
125 150
100
75
50
25
0
-25
-50
ID=250uA
15
12
9
3
0
0
0.5
1.0
1.5
2.0
2.5
3.0
10
8
6
4
2
0
0
0.5
3
2.5
2
1.5
1
Tj=125 C
0
100
75
25
50
125
150
2.0
1.8
1.6
1.4
1.2
1.0
0
V GS =10V
ID=3.5A
V GS =4.5V
ID=3.1A
6
15
12
9
6
3
V GS =2V
V GS =3V
V GS =10V
25 C
-55 C
V GS =2.5V
ID=2.6A
V GS =2.5V
V GS =4.5V
V GS =2.5V



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