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STT3414 датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STT3414
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STT3414 датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
±100
nA
VGS(th)
V
26
gFS
S
CISS
390
pF
COSS
69
pF
CRSS
56
pF
Qg
6.6
nC
11
18
16
tD(ON)
9.8
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=15V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=15V
ID=1A
VGS=10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=3.5A
VDS=5V,ID=3.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=24V , VGS=0V
VGS=±12V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=4.5V , ID=3.1A
33
31
42
m ohm
c
f=1.0MHz
c
STT3414
Ver 1.0
www.samhop.com.tw
Aug,23,2011
2
nC
Qgs
nC
Qgd
0.7
2
Gate-Drain Charge
Gate-Source Charge
VDS=15V,ID=3.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
nC
5
VDS=15V,ID=3.5A,VGS=10V
VDS=15V,ID=3.5A,VGS=4.5V
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.77
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
_
_
_
0.5
0.9
1.5
16
VGS=2.5V , ID=2.6A
m ohm
42
57



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