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STF8233 датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STF8233
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STF8233 датащи(HTML) 4 Page - SamHop Microelectronics Corp.

  STF8233 Datasheet HTML 1Page - SamHop Microelectronics Corp. STF8233 Datasheet HTML 2Page - SamHop Microelectronics Corp. STF8233 Datasheet HTML 3Page - SamHop Microelectronics Corp. STF8233 Datasheet HTML 4Page - SamHop Microelectronics Corp. STF8233 Datasheet HTML 5Page - SamHop Microelectronics Corp. STF8233 Datasheet HTML 6Page - SamHop Microelectronics Corp. STF8233 Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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STF8233
Ver 2.1
www.samhop.com.tw
Oct,22,2013
4
0
0
10
30
20
1
0.8
0.6
0.4
0.2
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 4.5 V
0.01
0
0.1
100
10
1
2.5
2
1.5
1
0.5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
3
25
°C
75
°C
125
°C
TA = -25
°C
-50
0.6
0.9
0.8
0.7
150
100
50
0
Tch - Channel Temperature -
°C
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
ID = 1.0mA
0.01
0.01
0.1
100
10
1
100
10
1
0.1
ID - Drain Current - A
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0
TA = -25
°C
25
°C
75
°C
125
°C
0
5
20
15
10
100
10
1
0.1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
VGS = 2.5 V
3.1 V
4.0 V
4.5 V
0
0
10
40
30
20
8
6
4
2
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
ID = 5.5 A
12
10
3.7 V
25
60
40
50
4.0 V
3.1 V
3.7 V
2.5 V



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