STF8233 datasheet(1/7 Pages) SAMHOP

номер детали	STF8233

подробное описание детали	Super high dense cell design for low RDS(ON).

PDF	7 Pages

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производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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1 / 7 page

Suface Mount Package.

S mHop Microelectronics C orp.

a

STF8233

Symbol

VDS

VGS

IDM

80

W

A

PD

°C

1.56

-55 to 150

ID

Units

Parameter

20

11

70

°C/W

V

±12

TA=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

20V

11A

7.5

@

VGS=4.0V

7.2

@

VGS=4.5V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

a

-Pulsed b

A

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Ambient

R JA

Ver 2.1

www.samhop.com.tw

Oct,22,2013

1

Details are subject to change without notice.

a

TA=25°C

TA=70°C

A

TA=70°C

W

Dual N-Channel Enhancement Mode Field Effect Transistor

Green

Product

ESD Protected.

8.8

1.00

9.0

@

VGS=3.1V

10.2

@

VGS=2.5V

8.2

@

VGS=3.7V

G1

S1

T DF N 2X 3

G2

S2

D1/D2

(Bottom view)

S1

G1

Bottom Drain Contact (D1/D2)

P IN 1

G2

S2

1

2

3

4

5

6

Аналогичный номер детали - STF8233

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Аналогичное описание - STF8233

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SamHop Microelectronics...	SDUD01N70	161Kb / 11P	Super high dense cell design for low RDS(ON).
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STF8233 датащи(PDF) 1 Page - SamHop Microelectronics Corp.

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Аналогичный номер детали - STF8233

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