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SDF02N65 датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали SDF02N65
подробное описание детали  Rugged and reliable
PDF  11 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SDF02N65 датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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www.samhop.com.tw
Dec,24,2013
2
Ver 2.1
4 Symbol
Min
Typ
Max
Units
BVDSS
650
V
1
IGSS
±100
nA
VGS(th)
2
V
gFS
1.7
S
VSD
CISS
302
pF
COSS
37
pF
CRSS
10
pF
Qg
15.2
nC
16.4
nC
Qgs
17
nC
Qgd
9.6
tD(ON)
ns
tr
1.4
ns
tD(OFF)
2.2
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=325V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=325V,ID=1A,VGS=10V
Fall Time
Turn-On Delay Time
ohm
VGS=10V , ID=1A
VDS=20V , ID=1A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=520V , VGS=0V
VGS= ±30V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
4
5.6
b
f=1.0MHz
b
VDS=325V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=1A
1.4
V
5
4.4
0.8
3
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
SDP02N65
SDF02N65



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