2DB1188P/Q/R

Document number: DS31144 Rev. 7 - 2

4 of 7

www.diodes.com

February 2013

© Diodes Incorporated

2DB1188P/Q/R

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Collector-Base Breakdown Voltage

-40





V

Collector-Emitter Breakdown Voltage

-32





V

Emitter-Base Breakdown Voltage

-6





V

Collector Cutoff Current





-100

nA

Emitter Cutoff Current





-100

nA

ON CHARACTERISTICS (Note 7)

Collector-Emitter Saturation Voltage



-0.35

-0.8

V

DC Current Gain

2DB1188P

82



180



2DB1188Q

120

270

2DB1188R

180

390

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product



120



MHz

f = 30MHz

Output Capacitance



20



pF

Notes:

7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

01

2

3

4

5

-V , COLLECTOR EMITTER VOLTAGE (V)

CE

Figure 1. Typical Collector Current

vs. Collector-Emitter Voltage

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

I = -2mA

B

I = -4mA

B

I = -6mA

B

I = -8mA

B

I = -10mA

B

0.001

0.01

0.1

1

10

-I , COLLECTOR CURRENT (A)

C

Figure 2. Typical DC Current Gain

vs. Collector Current (2DB1188Q)

0

50

100

150

200

250

300

350

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V

= -3V

CE

0.0001

0.001

0.01

0.1

1

10

-I , COLLECTOR CURRENT (A)

C

Figure 3. Typical Collector-Emitter Saturation Voltage

vs. Collector Current

0

0.1

0.2

0.3

0.4

0.5

0.6

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

I/I = 10

CB

0

0.2

0.4

0.6

0.8

1.0

1.2

0.0001

0.001

0.01

0.1

1

10

-I , COLLECTOR CURRENT (A)

C

Figure 4. Typical Base-Emitter Turn-On Voltage

vs. Collector Current

T = 85°C

A

T = 150°C

A

T = -55°C

A

T = 25°C

A

V

= -3V

CE