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2DB1188P-13 датащи(PDF) 2 Page - Diodes Incorporated |
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2DB1188P-13 датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() 2DB1188P/Q/R Document number: DS31144 Rev. 7 - 2 2 of 7 www.diodes.com February 2013 © Diodes Incorporated 2DB1188P/Q/R Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -6 V Continuous Collector Current IC -2 A Peak Pulse Collector Current ICM -3 A Base Current IB -500 mA Thermal Characteristics (@T A = +25°C unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 1 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 125 °C/W Thermal Resistance, Junction to Leads (Note 6) RθJL 19 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). |
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