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TSM70N10CPROG датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

номер детали TSM70N10CPROG
подробное описание детали  100V N-Channel Power MOSFET
PDF  8 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
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TSM70N10
100V N-Channel Power MOSFET
1/8
Version: D14
TO-252
(DPAK)
TO-251
(IPAK)
Key Parameter Performance
Parameter
Value
Unit
VDS
100
V
RDS(on)(max)
13
mΩ
Qg
145
nC
TO-251S
(IPAK SL)
Ordering Information
Part No.
Package
Packing
TSM70N10CP ROG
TO-252
2.5kpcs / 13” Reel
TSM70N10CH C5G
TO-251
75pcs / Tube
TSM70N10CH X0G
TO-251S
75pcs / Tube
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (TA=25
oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
(Note 3)
TC=25°C
ID
70
A
TC=70°C
61
TA=25°C
12
TA=70°C
9
Drain Current-Pulsed
(Note 1)
IDM
150
A
Avalanche Current, L=0.5mH
IAS, IAR
25
A
Avalanche Energy, L=0.5mH
EAS, EAR
156
mJ
Maximum Power Dissipation
(Note 2)
TC=25°C
PD
120
W
TC=70°C
80
TA=25°C
8.3
TA=70°C
5.3
Storage Temperature Range
TSTG
-55 to +150
°C
Operating Junction Temperature Range
TJ
-55 to +150
°C
Pin Definition:
1. Gate
2. Drain
3. Source


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