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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSM70N10CPROG датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM70N10CPROG датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 8 page  TSM70N10 100V N-Channel Power MOSFET 2/8 Version: D14 Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 1 oC/W Thermal Resistance - Junction to Ambient RӨJA 40 oC/W Electrical Specifications (TJ=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 100 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 30A RDS(ON) -- 10 13 mΩ Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3 4 V Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Dynamic Total Gate Charge VDS = 50V, ID = 30A, VGS = 10V Qg -- 145 -- nC Gate-Source Charge Qgs -- 25 -- Gate-Drain Charge Qgd -- 43 -- Input Capacitance VDS = 30V, VGS = 0V, f = 1.0MHz Ciss -- 4300 -- pF Output Capacitance Coss -- 300 -- Reverse Transfer Capacitance Crss -- 120 -- Switching Turn-On Delay Time VGS = 10V, VDS = 50V, RG = 3Ω td(on) -- 27 -- ns Turn-On Rise Time tr -- 13 -- Turn-Off Delay Time td(off) -- 15 -- Turn-Off Fall Time tf -- 42 -- Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward Voltage VGS=0V, IS=30A VSD -- 0.8 1.3 V Reverse Recovery Time IS = 30A, TJ=25 oC dI/dt = 100A/µs trr -- 165 -- ns Reverse Recovery Charge Qrr -- 175 -- nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air 3. The maximum current is limited by package. |
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