| поискавой системы для электроныых деталей |
|
LTC1435AI датащи(PDF) 11 Page - Linear Technology |
|
|
|||||||||||||||||||||||||||||
LTC1435AI датащи(HTML) 11 Page - Linear Technology |
|
11 / 20 page ![]() 11 LTC1435A APPLICATIONS INFORMATION control power to be derived from the output during normal operation (4.8V < VOUT < 9V) and from the internal regu- lator when the output is out of regulation (start-up, short circuit). Do not apply greater than 10V to the EXTVCC pin and ensure that EXTVCC < VIN. Significant efficiency gains can be realized by powering INTVCC fromtheoutput,sincetheVINcurrentresultingfrom the driver and control currents will be scaled by a factor of Duty Cycle/Efficiency. For 5V regulators this supply means connecting the EXTVCC pin directly to VOUT. However, for 3.3V and other lower voltage regulators, additional circuitry is required to derive INTVCC power from the output. The following list summarizes the four possible connections for EXTVCC: 1. EXTVCC left open (or grounded). This will cause INTVCC to be powered from the internal 5V regulator resulting in an efficiency penalty of up to 10% at high input volt- ages. 2. EXTVCC connected directly to VOUT. This is the normal connection for a 5V regulator and provides the highest efficiency. 3. EXTVCC connected to an output-derived boost network. For 3.3V and other low voltage regulators, efficiency gains can still be realized by connecting EXTVCC to an output-derived voltage which has been boosted to greater than 4.8V. This can be done with either the in- ductive boost winding as shown in Figure 4a or the capacitive charge pump shown in Figure 4b. The charge pump has the advantage of simple magnetics. 4. EXTVCC connected to an external supply. If an external supply is available in the 5V to 10V range (EXTVCC≤VIN), it may be used to power EXTVCC providing it is compat- ible with the MOSFET gate drive requirements. When driving standard threshold MOSFETs, the external sup- ply must always be present during operation to prevent MOSFET failure due to insufficient gate drive. Topside MOSFET Driver Supply (CB, DB) An external bootstrap capacitor CB connected to the Boost pin supplies the gate drive voltage for the topside MOSFET. Capacitor CB in the Functional Diagram is charged through diode DB from INTVCC when the SW pin is low. When the Figure 4a. Secondary Output Loop and EXTVCC Connection EXTVCC VIN TG BG PGND LTC1435A N-CH N-CH + CIN VIN + COUT L1 RSENSE VOUT + 1 µF 1435A F04b VN2222LL BAT85 BAT85 BAT85 0.22 µF SW Figure 4b. Capacitive Charge Pump for EXTVCC topside MOSFET is to be turned on, the driver places the CB voltage across the gate source of the MOSFET. This en- hances the MOSFET and turns on the topside switch. The switch node voltage SW rises to VIN and the Boost pin rises to VIN + INTVCC. The value of the boost capacitor CB needs to be 100 times greater than the total input capacitance of the topside MOSFET. In most applications 0.1 µF is ad- equate. The reverse breakdown on DB must be greater than VIN(MAX). Output Voltage Programming The output voltage is set by a resistive divider according to the following formula: VV R R VV OUT OUT =+ ≥ 119 1 2 1 119 ., . R6 R5 EXTVCC SFB SGND VIN TG BG PGND LTC1435A N-CH N-CH + CIN VIN 1N4148 + 1 µF + COUT VSEC L1 1:N RSENSE VOUT OPTIONAL EXT VCC CONNECTION 5V ≤ VSEC ≤ 9V 1435A F04a SW |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |