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LT1573CS8 датащи(PDF) 9 Page - Linear Technology |
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LT1573CS8 датащи(HTML) 9 Page - Linear Technology |
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9 / 16 page ![]() 9 LT1573 Resistor RB helps to turn off the PNP (QOUT in Figure 2). Smaller values for RB turn off the PNP faster but will increase input current. The recommended value for RB is 50 Ω. For circuits that do not require high output current or fast transient response, the value of RB can be increased up to 200 Ω. For the D45H11, the emitter-base voltage is a function of base and collector current. Table 2 lists some useful operating points for the D45H11. These points were empirically determined using a sampling of devices. Table 2. D45H11 VBE IB IC VBE AT 25°C (mA) (A) (V) 1 0.2 0.65 7 1 0.75 23 2 0.80 45 3 0.85 66 4 0.90 100 5 0.95 Design Example Given the following operating requirements: 4.5V < VIN < 5.5V IOUT(MAX) = 5A VOUT = 3.3V 1. The first step is to determine the required drive current for the D45H11. Dropout voltage must be less than 1.2V at 5A output current. From Table 1, a drive current of 100mA will give 0.7V dropout voltage at an output current of 5A. This satisfies the operating require- ments. 2. The next step is to determine the value of RD. Assume RB is 50Ω. From Table 2, the maximum emitter-base voltage for this design is 0.95V. The current through RB is: IRB = VBE/RB = 0.95/50 = 19mA VDRIVE is the DRIVE pin saturation voltage when the DRIVE pin current equals 119mA, which can be read from the typical performance characteristics curve to be 0.39V. Resistor RD now can be calculated from Eq (1): RD = (4.5 – 0.95 – 0.39)V/(100 + 19)mA = 26.6Ω The next lowest 5% value is 24 Ω. Overcurrent Latch-Off In addition to limiting the base drive current, the resistor RD is included in the circuit for the overcurrent protection latch-off function. There is a minimum value for this resistance. It is calculated by Equation 1 with the drive current IDRIVE set to the minimum available drive current (= 250mA) from the LT1573. At high currents, RD also limits the power dissipation in the LT1573. In some conditions, resistor RD can be replaced with a short. This is possible in circuits where an overload is unlikely and the input voltage and drive requirements are low. If resistor RD is not included in the circuit, the regulator is protected against the overcurrent condition only by the thermal shutdown function. After the resistor RD is determined, a certain amount of base drive current is available to the external PNP transistor. An overcurrent or output short condition will demand a base drive current greater than the LT1573 can supply. The internal drive transistor will saturate. A time-out latch will be triggered by this overcurrent condition to turn off the regulator system. The time-out period is determined by an external capacitor connected between the LATCH and GND pins. The time- out period is equal to the time it takes for the capacitor to charge from 0V to the latch threshold which is equal to 2VBE. The latch charging current is set by an internal current source and is a function of input voltage and temperature as shown in the typical performance charac- teristics curve. At 25 °C, the typical latch charging current ranges from 7.2 µA with 3V input to 8µA with 7V input. If the overcurrent or output short condition persists longer than the time-out period, the regulator will be shut down. Otherwise, the regulator will function normally. In the latch-off mode, some extra current is drawn from the input to maintain the latch. The latching current is a function of input voltage and temperature as shown in the typical performance characteristic curve. At 25 °C, the typical latching current ranges from 0.3mA with 3V input to 9.5mA with 7V input. The latch can be reset by recycling input power, by grounding the LATCH pin or by putting the device into shutdown. APPLICATIO S I FOR ATIO |
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