STS12N3LLH5 datasheet(1/13 Pages) STMICROELECTRONICS

номер детали	STS12N3LLH5

подробное описание детали	This device is an N-channel Power

PDF	13 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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1 / 13 page

This is information on a product in full production.

June 2012

Doc ID 17152 Rev 3

1/13

13

STS12N3LLH5

N-channel 30 V, 0.0068

Ω, 12 A, SO-8

STripFET™ V Power MOSFET

Datasheet — production data

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

Application

■ Switching applications

Description

This device is an N-channel Power MOSFET

developed using STMicroelectronics’

STripFET™V technology. The device has been

optimized to achieve very low on-state resistance,

contributing to an FOM that is among the best in

its class.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

max

ID

STS12N3LLH5

30 V

< 0.0075

Ω 12 A (1)

1.

The value is rated according Rthj-pcb

SO-8

1

4

5

8

Table 1.

Device summary

Order code

Marking

Package

Packaging

STS12N3LLH5

12D3L

SO-8

Tape and reel

www.st.com

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STS12N3LLH5 датащи(PDF) 1 Page - STMicroelectronics

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