DocID025810 Rev 3

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AN4434

Cycling endurance

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1

Cycling endurance

This section intends to offer all details concerning the cycling capabilities of the CMOS F8H

1.1

Cycling values specified in automotive MXXxxx-A125/A145

datasheets

The automotive MXXxxx-A125/A145 EEPROM devices offer outstanding cycling

performance, as detailed in Table 2.

1.2

CMOS F8H automotive process and MXXxxx-A125/A145

cycling performance

1.2.1

Cycling and temperature dependence

Glossary:

–

Cycle = Internal write cycle executed inside the EEPROM.

–

Cycling = cumulated number of write cycles

As specified in the CMOS F8H automotive MXXxxx-A125/A145 datasheets, the cycling

endurance depends on the operating temperature (and is independent of the value of the

supply voltage): the higher the temperature, the lower the cycling performance

.

This safe cycling operating area can be represented by the following equation and/or by

Figure 1.

Number of cycles

4 Million∗e

k∗ t

° 25

–

()

–

()

=

a. Automotive EEPROM based on CMOS F8H process are detailed in “MXXxxx-A125/A145” data sheets (ex:

M24C64-A125 data sheet, M95256-A125 data sheet, M93C66-A125 data sheet)

Table 2. CMOS F8H process Automotive devices (-40°C to +145°C)

Products

Each cell inside an MXXxxx-A125/A145

EEPROM can be cycled:

M95xxx-A125/A145, M24xxx-A125 and M93xxx-A125

as defined in Table 1

4 million cycles (at 25°C)

1.2 million cycles (at 85°C)

0.6 million cycles (at 125°C)

0.4 million cycles (at 145°C)