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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LTC1412 датащи(PDF) 3 Page - Linear Technology |
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LTC1412 датащи(HTML) 3 Page - Linear Technology |
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3 / 16 page  3 LTC1412 (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS S/(N + D) Signal-to-Noise Plus Distortion Ratio 100kHz Input Signal 72.5 dB 1.465MHz Input Signal 70 72 dB THD Total Harmonic Distortion 100kHz Input Signal, First 5 Harmonics – 90 dB 1.465MHz Input Signal, First 5 Harmonics – 80 dB SFDR Spurious Free Dynamic Range 1.465MHz Input Signal 82 dB IMD Intermodulation Distortion fIN1 = 29.37kHz, fIN2 = 32.446kHz – 84 dB Full Power Bandwidth 40 MHz Full Linear Bandwidth S/(N + D) ≥ 68dB 4 MHz ACCURACY IC DY A SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VDD Positive Supply Voltage (Note 10) 4.75 5.25 V VSS Negative Supply Voltage (Note 10) – 4.75 – 5.25 V IDD Positive Supply Current CS High q 12 16 mA ISS Negative Supply Current CS High q 18 28 mA PD Power Dissipation q 150 220 mW (Note 5) I TER AL REFERE CE CHARACTERISTICS PARAMETER CONDITIONS MIN TYP MAX UNITS VREF Output Voltage IOUT = 0 2.480 2.500 2.520 V VREF Output Tempco IOUT = 0 ±15 ppm/ °C VREF Line Regulation 4.75V ≤ VDD ≤ 5.25V 0.01 LSB/ V – 5.25V ≤ VSS ≤ –4.75V 0.01 LSB/ V VREF Output Resistance 0.1mA ≤ IOUT ≤ 0.1mA 2 k Ω COMP Output Voltage IOUT = 0 4.06 V POWER REQUIRE E TS (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VIH High Level Input Voltage VDD = 5.25V q 2.4 V VIL Low Level Input Voltage VDD = 4.75V q 0.8 V IIN Digital Input Current VIN = 0V to VDD q ±10 µA CIN Digital Input Capacitance 1.4 pF VOH High Level Output Voltage VDD = 4.75V, IO = – 10µA 4.75 V VDD = 4.75V, IO = – 200µA q 4.0 4.71 V VOL Low Level Output Voltage VDD = 4.75V, IO = 160µA 0.05 V VDD = 4.75V, IO = 1.6mA q 0.10 0.4 V IOZ Hi-Z Output Leakage D11 to D0 VOUT = 0V to VDD, CS High q ±10 µA COZ Hi-Z Output Capacitance D11 to D0 CS High (Note 9) 7 pF ISOURCE Output Source Current VOUT = 0V – 10 mA (Note 5) DIGITAL I PUTS AND OUTPUTS |
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