| поискавой системы для электроныых деталей |
|
AN2986 датащи(PDF) 11 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN2986 датащи(HTML) 11 Page - STMicroelectronics |
|
11 / 18 page ![]() AN2986 Gate current variation Doc ID 15727 Rev 1 11/18 The Z01’s maximum VGT is then close to 1.1 V at 1.44 A peak load current in negative half- wave, for a 0 °C junction temperature (worst case). A maximum value of 1.3 V is used, as specified in the Z01 datasheet for 25 °C. The ACS108’s maximum absolute VGT is close to 1 V for a 1.15 A peak load current, for a 0 °C junction temperature (worst case). A maximum value of 1 V is used, as specified in the ACS108-6T datasheet for 25 °C. Two examples are shown. The same components are used as those given in Section 1.2.2. Note that different values than those specified in Table 1 could be used, especially if a different gate current is applied. Values are then taken from the MCU datasheet curves (for example.: STM8S10xxx). Example 3: MCU: STM8S with ACS108 -6T for power supply 5 V ±10% Specified values: RG =180 Ω, VDD = 5 V, VGT (25 °C) = 1 V Calculated values: VDD min= 0.9 x 5 V = 4.5 V VGT (0 °C) = 1 + 0.05 V VOLmax (25 °C, 16 mA) = 0.6 V IGmin is then given by: Equation 5 The MCU is able to provide current that is above the minimum gate current for ambient temperature 0 °C. An estimation of VOLmax has been provided for one high-sink I/O port of STM8S up to 16 mA. A standard I/O port could have lower current capability (10 mA), in which case several I/O ports have to be put in parallel. Example 4: STM32 + Z0103 for 3.3 V ±5% Specified values: RG = 300 Ω, VDD = 3.3 V, VGT (25 °C) = 1.3 V Calculated values: VDDmin = 0.95 x 3.3 V = 3.13 V, VGT (0 °C) = 0.05 + 1.3 V VOLmax (IGT = 8 mA) = 0.4 V IGmin is then given by: Equation 6 The MCU is able to provide current that is above the minimum gate current for ambient temperature 0 °C. An estimation of VOLmax has been provided for one I/O port of STM32 (when 8 I/O ports are sunk with 8 mA each at the same time). If the current sunk by one I/O exceeds 8 mA, the value of 1.3 V should be used instead of 0.4 V. I Gmin 4.5 1.05 – 0.6 – 1.01 180 × ---------------------------------------- 15.7mA = < I Gmin 3.13 1.35 – 0.4 – 1.01 300 × ------------------------------------------- 4.6mA = < |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |