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LTC4232 датащи(PDF) 12 Page - Linear Technology

номер детали LTC4232
подробное описание детали  5A Integrated Hot Swap Controller
PDF  16 Pages
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производитель  LINER [Linear Technology]
домашняя страница  http://www.linear.com
Logo LINER - Linear Technology

LTC4232 датащи(HTML) 12 Page - Linear Technology

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LTC4232
12
4232fb
For more information www.linear.com/LTC4232
APPLICATIONS INFORMATION
Power Good Indication
In addition to setting the foldback current limit threshold,
the FB pin is used to determine a power good condition.
The Figure 1 application uses an external resistive divider
on the OUT pin to drive the FB pin. The PG comparator
indicates logic high when OUT pin rises above 10.5V. If the
OUT pin subsequently falls below 10.3V the comparator
toggles low. On the LTC4232 the PG comparator drives
high when the FB pin rises above 1.235V and low when
it falls below 1.215V.
Once the PG comparator is high the GATE pin voltage is
monitored with respect to the OUT pin. Once the GATE
minus OUT voltage exceeds 4.2V the PG pin goes high.
This indicates to the system that it is safe to load the OUT
pin while the MOSFET is completely turned “on”. The PG
pin goes low when the GATE is commanded off (using
the UV, OV or SENSE pins) or when the PG comparator
drives low.
Design Example
Consider the following design example (Figure 5): VIN =
12V, IMAX = 5A. IINRUSH = 100mA, CL = 330µF, VUVON =
9.88V,VOVOFF=15.2V,VPWRGD=10.5V.Acurrentlimitfault
triggers an automatic restart of the power-up sequence.
As mentioned previously the charge-up time is the out-
put voltage (12V) divided by the output rate of 0.3V/ms
resulting in 40ms. The peak power dissipation of 12V at
100mA (or 1.2W) is within the SOA of the pass MOSFET
for 40ms (see MOSFET SOA curve in the Typical Perfor-
mance Characteristics section).
Next the power dissipated in the MOSFET during overcur-
rent must be limited. The active current limit uses a timer
to prevent excessive energy dissipation in the MOSFET.
Theworst-casepowerdissipationoccurswhenthevoltage
versus current profile of the foldback current limit is at
the maximum. This occurs when the current is 6.1A and
the voltage is one half of the 12V or 6V. See the Current
LimitThresholdFoldbackintheTypicalPerformanceChar-
acteristics section to view this profile. In order to survive
36W, the MOSFET SOA dictates a maximum time of 10ms
(see SOA graph). Use the internal 2ms timer invoked by
tying the TIMER pin to INTVCC. After the 2ms timeout the
FLT pin needs to pull-down on the UV pin to restart the
power-up sequence.
The values for overvoltage, undervoltage and power good
thresholds using the resistive dividers on the UV, OV and
FB pins match the requirements of turn-on at 9.88V and
turn-off at 15.2V.
The final schematic in Figure 5 results in very few external
components. The pull-up resistor, R1, connects to the
PG pin while the 20k (R2) converts the IMON current to a
voltage at a ratio:
VIMON = 20[µA/A] • 20k • IOUT = 0.4[V/A] • IOUT
In addition there is a 1µF bypass (C1) on the INTVCC pin.
Layout Considerations
In Hot Swap applications where load currents can be 5A,
narrowPCBtracksexhibitmoreresistancethanwidertracks
and operate at elevated temperatures. The minimum trace
width for 1oz copper foil is 0.02" per amp to make sure
the trace stays at a reasonable temperature. Using 0.03"
per amp or wider is recommended. Note that 1oz copper
exhibits a sheet resistance of about 0.5mΩ/square. Small
resistances add up quickly in high current applications.
Figure 5. 5A, 12V Card Resident Application
The inrush current is defined by the current required to
charge the output capacitor using the fixed 0.3V/ms GATE
charge-up rate. The inrush current is defined as:
IINRUSH= CL •
0.3V
ms
 = 330µF •
0.3V
ms
 = 100mA
ADC
226k
C1
1µF
20k
12V
140k
20k
R2
20k
4232 F05
CL
330µF
VDD
UV
OUT
FB
PG
GATE
GND
IMON
ISET
LTC4232
OV
INTVCC
TIMER
FLT
+
VOUT
12V
5A
R1
10k
20k
150k
Z1
Z1: DIODES INC. SMAJ22A



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