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LTC4232 датащи(PDF) 12 Page - Linear Technology |
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LTC4232 датащи(HTML) 12 Page - Linear Technology |
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12 / 16 page ![]() LTC4232 12 4232fb For more information www.linear.com/LTC4232 APPLICATIONS INFORMATION Power Good Indication In addition to setting the foldback current limit threshold, the FB pin is used to determine a power good condition. The Figure 1 application uses an external resistive divider on the OUT pin to drive the FB pin. The PG comparator indicates logic high when OUT pin rises above 10.5V. If the OUT pin subsequently falls below 10.3V the comparator toggles low. On the LTC4232 the PG comparator drives high when the FB pin rises above 1.235V and low when it falls below 1.215V. Once the PG comparator is high the GATE pin voltage is monitored with respect to the OUT pin. Once the GATE minus OUT voltage exceeds 4.2V the PG pin goes high. This indicates to the system that it is safe to load the OUT pin while the MOSFET is completely turned “on”. The PG pin goes low when the GATE is commanded off (using the UV, OV or SENSE pins) or when the PG comparator drives low. Design Example Consider the following design example (Figure 5): VIN = 12V, IMAX = 5A. IINRUSH = 100mA, CL = 330µF, VUVON = 9.88V,VOVOFF=15.2V,VPWRGD=10.5V.Acurrentlimitfault triggers an automatic restart of the power-up sequence. As mentioned previously the charge-up time is the out- put voltage (12V) divided by the output rate of 0.3V/ms resulting in 40ms. The peak power dissipation of 12V at 100mA (or 1.2W) is within the SOA of the pass MOSFET for 40ms (see MOSFET SOA curve in the Typical Perfor- mance Characteristics section). Next the power dissipated in the MOSFET during overcur- rent must be limited. The active current limit uses a timer to prevent excessive energy dissipation in the MOSFET. Theworst-casepowerdissipationoccurswhenthevoltage versus current profile of the foldback current limit is at the maximum. This occurs when the current is 6.1A and the voltage is one half of the 12V or 6V. See the Current LimitThresholdFoldbackintheTypicalPerformanceChar- acteristics section to view this profile. In order to survive 36W, the MOSFET SOA dictates a maximum time of 10ms (see SOA graph). Use the internal 2ms timer invoked by tying the TIMER pin to INTVCC. After the 2ms timeout the FLT pin needs to pull-down on the UV pin to restart the power-up sequence. The values for overvoltage, undervoltage and power good thresholds using the resistive dividers on the UV, OV and FB pins match the requirements of turn-on at 9.88V and turn-off at 15.2V. The final schematic in Figure 5 results in very few external components. The pull-up resistor, R1, connects to the PG pin while the 20k (R2) converts the IMON current to a voltage at a ratio: VIMON = 20[µA/A] • 20k • IOUT = 0.4[V/A] • IOUT In addition there is a 1µF bypass (C1) on the INTVCC pin. Layout Considerations In Hot Swap applications where load currents can be 5A, narrowPCBtracksexhibitmoreresistancethanwidertracks and operate at elevated temperatures. The minimum trace width for 1oz copper foil is 0.02" per amp to make sure the trace stays at a reasonable temperature. Using 0.03" per amp or wider is recommended. Note that 1oz copper exhibits a sheet resistance of about 0.5mΩ/square. Small resistances add up quickly in high current applications. Figure 5. 5A, 12V Card Resident Application The inrush current is defined by the current required to charge the output capacitor using the fixed 0.3V/ms GATE charge-up rate. The inrush current is defined as: IINRUSH= CL • 0.3V ms = 330µF • 0.3V ms = 100mA ADC 226k C1 1µF 20k 12V 140k 20k R2 20k 4232 F05 CL 330µF VDD UV OUT FB PG GATE GND IMON ISET LTC4232 OV INTVCC TIMER FLT + VOUT 12V 5A R1 10k 20k 150k Z1 Z1: DIODES INC. SMAJ22A |
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