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LTC4232 датащи(PDF) 9 Page - Linear Technology

номер детали LTC4232
подробное описание детали  5A Integrated Hot Swap Controller
PDF  16 Pages
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производитель  LINER [Linear Technology]
домашняя страница  http://www.linear.com
Logo LINER - Linear Technology

LTC4232 датащи(HTML) 9 Page - Linear Technology

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LTC4232
9
4232fb
For more information www.linear.com/LTC4232
APPLICATIONS INFORMATION
This gate slope is designed to charge up a 1000µF capaci-
tor to 12V in 40ms, with an inrush current of 300mA. This
allows the inrush current to stay under the current limit
threshold(1.5A)forcapacitorslessthan1000µF.Included
in the Typical Performance Characteristics section is a
graph of the Safe Operating Area for the MOSFET. It is
evident from this graph that the power dissipation at 12V,
300mA for 40ms is in the safe region.
Adding the RGATE, CGATE and CCOMP network on the GATE
pin will lower the inrush current below the default value
set by the INRUSH circuit. The GATE is charged with an
24µA current source (when INRUSH circuit is not driving
the GATE). The voltage at the GATE pin rises with a slope
equalto24µA/CGATEandthesupplyinrushcurrentissetat:
IINRUSH=
CL
CGATE
• 24µA
When the GATE voltage reaches the MOSFET threshold
voltage, the switch begins to turn on and the OUT volt-
age follows the GATE voltage as it increases. Once OUT
reaches VDD, the GATE will ramp up until clamped by the
6.15V Zener between GATE and OUT.
As the OUT voltage rises, so will the FB pin which is moni-
toring it. Once the FB pin crosses its 1.235V threshold
and the GATE to OUT voltage exceeds 4.2V, the PG pin
will cease to pull low and indicate that the power is good.
Parasitic MOSFET Oscillation
When the N-channel MOSFET ramps up the output during
power-up it operates as a source follower. The source
follower configuration may self-oscillate in the range of
25kHz to 300kHz when the load capacitance is less than
Figure 2. Supply Turn-On
Figure 1. 2A, 12V Card Resident Application
The typical LTC4232 application is in a high availability
system that uses a positive voltage supply to distribute
power to individual cards. A complete application circuit
is shown in Figure 1. External component selection is
discussed in detail in the following sections.
t1
t2
SLOPE = 0.3V/ms
GATE
OUT
VDD + 6.15
VDD
4232 F02
Turn-On Sequence
Several conditions must be present before the internal
pass MOSFET can be turned on. First the supply VDD must
exceed its undervoltage lockout level. Next the internally
generated supply INTVCC must cross its 2.65V undervolt-
agethreshold.Thisgeneratesa25µspower-on-resetpulse
whichclearsthefaultregisterandinitializesinternallatches.
After the power-on-reset pulse, the LTC4232 will go
through the following sequence. First, the UV and OV pins
must indicate that the input voltage is within the accept-
able range. All of these conditions must be satisfied for
the duration of 100ms to ensure that any contact bounce
during the insertion has ended.
The MOSFET is turned on by charging up the GATE with
a charge pump generated current source whose value is
adjusted by shunting a portion of the pull-up current to
ground. The charging current is controlled by the INRUSH
circuit that maintains a constant slope of GATE voltage
versus time (Figure 2). The voltage at the GATE pin rises
with a slope of 0.3V/ms and the supply inrush current is
set at:
IINRUSH = CL • (0.3V/ms)
ADC
R1
226k
C1
1µF
R2
20k
12V
4232 F01
CT
0.1µF
CL
330µF
VOUT
12V
2A
VDD
UV
OUT
FB
PG
GND
IMON
RSET
20k
RMON
20k
ISET
CGATE
0.1µF
RGATE
100k
GATE
LTC4232
OV
INTVCC
TIMER
FLT
+
R3
140k
R4
20k
R7
10k
R6
20k
R5
150k
Z1
Z1: DIODES INC. SMAJ22A
CCOMP
3.3nF



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