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LTC4232 датащи(PDF) 9 Page - Linear Technology |
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LTC4232 датащи(HTML) 9 Page - Linear Technology |
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9 / 16 page ![]() LTC4232 9 4232fb For more information www.linear.com/LTC4232 APPLICATIONS INFORMATION This gate slope is designed to charge up a 1000µF capaci- tor to 12V in 40ms, with an inrush current of 300mA. This allows the inrush current to stay under the current limit threshold(1.5A)forcapacitorslessthan1000µF.Included in the Typical Performance Characteristics section is a graph of the Safe Operating Area for the MOSFET. It is evident from this graph that the power dissipation at 12V, 300mA for 40ms is in the safe region. Adding the RGATE, CGATE and CCOMP network on the GATE pin will lower the inrush current below the default value set by the INRUSH circuit. The GATE is charged with an 24µA current source (when INRUSH circuit is not driving the GATE). The voltage at the GATE pin rises with a slope equalto24µA/CGATEandthesupplyinrushcurrentissetat: IINRUSH= CL CGATE • 24µA When the GATE voltage reaches the MOSFET threshold voltage, the switch begins to turn on and the OUT volt- age follows the GATE voltage as it increases. Once OUT reaches VDD, the GATE will ramp up until clamped by the 6.15V Zener between GATE and OUT. As the OUT voltage rises, so will the FB pin which is moni- toring it. Once the FB pin crosses its 1.235V threshold and the GATE to OUT voltage exceeds 4.2V, the PG pin will cease to pull low and indicate that the power is good. Parasitic MOSFET Oscillation When the N-channel MOSFET ramps up the output during power-up it operates as a source follower. The source follower configuration may self-oscillate in the range of 25kHz to 300kHz when the load capacitance is less than Figure 2. Supply Turn-On Figure 1. 2A, 12V Card Resident Application The typical LTC4232 application is in a high availability system that uses a positive voltage supply to distribute power to individual cards. A complete application circuit is shown in Figure 1. External component selection is discussed in detail in the following sections. t1 t2 SLOPE = 0.3V/ms GATE OUT VDD + 6.15 VDD 4232 F02 Turn-On Sequence Several conditions must be present before the internal pass MOSFET can be turned on. First the supply VDD must exceed its undervoltage lockout level. Next the internally generated supply INTVCC must cross its 2.65V undervolt- agethreshold.Thisgeneratesa25µspower-on-resetpulse whichclearsthefaultregisterandinitializesinternallatches. After the power-on-reset pulse, the LTC4232 will go through the following sequence. First, the UV and OV pins must indicate that the input voltage is within the accept- able range. All of these conditions must be satisfied for the duration of 100ms to ensure that any contact bounce during the insertion has ended. The MOSFET is turned on by charging up the GATE with a charge pump generated current source whose value is adjusted by shunting a portion of the pull-up current to ground. The charging current is controlled by the INRUSH circuit that maintains a constant slope of GATE voltage versus time (Figure 2). The voltage at the GATE pin rises with a slope of 0.3V/ms and the supply inrush current is set at: IINRUSH = CL • (0.3V/ms) ADC R1 226k C1 1µF R2 20k 12V 4232 F01 CT 0.1µF CL 330µF VOUT 12V 2A VDD UV OUT FB PG GND IMON RSET 20k RMON 20k ISET CGATE 0.1µF RGATE 100k GATE LTC4232 OV INTVCC TIMER FLT + R3 140k R4 20k R7 10k R6 20k R5 150k Z1 Z1: DIODES INC. SMAJ22A CCOMP 3.3nF |
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