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AN4406 датащи(PDF) 23 Page - STMicroelectronics |
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AN4406 датащи(HTML) 23 Page - STMicroelectronics |
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23 / 27 page ![]() DocID025567 Rev 1 23/27 AN4406 Testing and comparing 27 4.3.3 Results From the electrical results, the performance of the devices under test are conditioned by the current level. In the resonant topology, at low load, the impact of the output capacitances of the MOSFET's determine the energy losses dissipated inside the devices. Their variation with voltage VDS and their symmetry play a fundamental role on the final performance. Figure 21. Efficiency data vs load level in 400 W evaluation board Figure 22. η (%) efficiency at V IN = 230 VAC for specific load % Figure 23. Average % efficiency at VIN = 230 VAC |
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