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AN4209 датащи(PDF) 3 Page - STMicroelectronics

номер детали AN4209
подробное описание детали  Design methodology for repetitive voltage suppressors
PDF  19 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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AN4209 датащи(HTML) 3 Page - STMicroelectronics

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DocID023949 Rev 2
3/19
AN4209
STRVS parameters
1
STRVS parameters
This section defines the electrical and thermal characteristics of the STRVS.
1.1
Electrical parameters
Figure 1. Typical reverse characteristic VR = (IR) of an STRVS device
Figure 1 shows the typical reverse characteristic given at two temperatures of an STRVS
device.
Stand-off voltage (VRM)
The stand-off voltage is specified for I = IRM = 1 µA and Tj = 25 °C. Under these conditions,
the device is still acting as an open circuit. This parameter is one of the key parameters in
circuit protection.
Breakdown voltage (VBR)
The breakdown voltage corresponds to the voltage from which the STRVS starts to go into
the avalanche region. This parameter is specified for I = IBR = 1 mA and Tj = 25 °C. The VBR
parameter follows a linear variation with junction temperature as shown in Equation 1.
Equation 1
Where TREF = reference temperature expressed in °C, generally given at 25 °C and
T = temperature coefficient in 1/°C.
I(A)
V(V)
0
TJ2 >TJ1 TJ1= 25°C
IBR(25°C)- 1mA
IRM(25°C)- 1µA
IPP(25°C)
(
)
)
T
(T
1
)
(T
V
)
(T
V
REF
j
T
REF
BR
j
BR
-
·
+
·
=
α



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