IRG4PC50KD datasheet(1/10 Pages) IRF

номер детали	IRG4PC50KD

подробное описание детали	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)

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производитель	IRF [International Rectifier]

домашняя страница	http://www.irf.com

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IRG4PC50KD

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

E

G

n -c hanne l

C

VCES = 600V

VCE(on) typ. = 1.84V

@VGE = 15V, IC = 30A

Short Circuit Rated

UltraFast IGBT

q

Short Circuit Rated UltraFast: Optimized for high

operating frequencies >5.0 kHz, and Short Circuit Rated

to 10µs @125°C, VGE = 15V

q

Generation 4 IGBT design provides tighter parameter

distribution and higher efficiency than Generation 3

q

IGBT co-packaged with HEXFRED

TM ultrafast,

ultra-soft recovery anti-parallel diodes for use in

bridge configurations

q

Industry standard TO-247AC package

Benefits

q

Generation 4 IGBTs offer highest efficiencies available

q

HEXFRED diodes optimized for performance with IGBTs.

Minimized recovery characteristics require less/no snubbing

q

Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

PD -91582B

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

52

IC @ TC = 100°C

Continuous Collector Current

30

ICM

Pulsed Collector Current

104

A

ILM

Clamped Inductive Load Current

104

IF @ TC = 100°C

Diode Continuous Forward Current

25

IFM

Diode Maximum Forward Current

280

tsc

Short Circuit Withstand Time

10

µs

VGE

Gate-to-Emitter Voltage

± 20

V

PD @ TC = 25°C

Maximum Power Dissipation

200

PD @ TC = 100°C

Maximum Power Dissipation

78

TJ

Operating Junction and

-55 to +150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw.

10 lbf•in (1.1 N•m)

Absolute Maximum Ratings

W

Thermal Resistance

TO-247AC

Parameter

Min.

Typ.

Max.

Units

RqJC

Junction-to-Case - IGBT

—

0.64

RqJC

Junction-to-Case - Diode

—

0.83

°C/W

RqCS

Case-to-Sink, flat, greased surface

—

0.24

—

RqJA

Junction-to-Ambient, typical socket mount

—

40

Wt

Weight

—

6 (0.21)

—

g (oz)

12/3/98

Аналогичный номер детали - IRG4PC50KD

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	IRG4PC50KD	591Kb / 3P	Standard Speed IGBT
International Rectifier	IRG4PC50KDPBF	650Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
	IRG4PC50KDPBF	651Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
	IRG4PC50KDPBF	651Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

More results

Аналогичное описание - IRG4PC50KD

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRG4BC10SD-S	217Kb / 12P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
	IRG4BC10UD	184Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
	IRG4BC15MD	256Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A)
	IRG4BC15UD-S	210Kb / 12P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)
	IRG4BC20FD-S	222Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
	IRG4BC20KD	199Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
	IRG4BC20UDS	235Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
	IRG4BC30UD	234Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
	IRG4PC30KD	178Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
	IRG4PC50K	115Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)

More results

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