IRG4BC20FD datasheet(1/10 Pages) IRF

номер детали	IRG4BC20FD

подробное описание детали	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

PDF	10 Pages

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производитель	IRF [International Rectifier]

домашняя страница	http://www.irf.com

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1 / 10 page

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

16

IC @ TC = 100°C

Continuous Collector Current

9.0

ICM

Pulsed Collector Current

Q

64

A

ILM

Clamped Inductive Load Current

R

64

IF @ TC = 100°C

Diode Continuous Forward Current

7.0

IFM

Diode Maximum Forward Current

32

VGE

Gate-to-Emitter Voltage

± 20

V

PD @ TC = 25°C

Maximum Power Dissipation

60

PD @ TC = 100°C

Maximum Power Dissipation

24

TJ

Operating Junction and

-55 to +150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw.

10 lbf•in (1.1 N•m)

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-Case - IGBT

–––

2.1

RθJC

Junction-to-Case - Diode

–––

3.5

°C/W

RθCS

Case-to-Sink, flat, greased surface

–––

0.50

–––

RθJA

Junction-to-Ambient, typical socket mount

–––

80

Wt

Weight

–––

2 (0.07)

–––

g (oz)

IRG4BC20FD

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

E

G

n-c hannel

C

VCES = 600V

VCE(on) typ.

= 1.66V

@VGE = 15V, IC = 9.0A

Thermal Resistance

Fast CoPack IGBT

7/11/2000

Absolute Maximum Ratings

• Fast: optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard TO-220AB package

Benefits

• Generation -4 IGBTs offer highest efficiencies

available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs. Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

PD 91601A

W

TO-220AB

www.irf.com

1

Аналогичный номер детали - IRG4BC20FD

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRG4BC20FD	98Kb / 35P	Fit Rate / Equivalent Device Hours
	IRG4BC20FD-S	222Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
	IRG4BC20FD-SPBF	298Kb / 12P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT
	IRG4BC20FD-STRL	222Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
	IRG4BC20FDPBF	318Kb / 11P	INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

More results

Аналогичное описание - IRG4BC20FD

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRG4BC10UD	184Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
	IRG4BC15UD-S	210Kb / 12P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)
	IRG4BC20F	161Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
	IRG4BC20FD-S	222Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
	IRG4BC20K	138Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
	IRG4BC20KD	199Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
	IRG4BC20KDS	222Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
	IRG4BC20KS	162Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
	IRG4BC20UDS	235Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
	IRG4BC30UD	234Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

More results

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Аналогичный номер детали - IRG4BC20FD

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