Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

RthJC

Junction-to-Case

—

—

0.83

RthJ-PCB

Junction-to-PC Board

—

TBD

—

K/W

Soldered to a copper clad PC board

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

55

Modified MOSFET symbol showing the

ISM

Pulse Source Current (Body Diode) Œ

—

—

256

integral reverse p-n junction rectifier.

VSD

Diode Forward Voltage

—

—

2.5

V

trr

Reverse Recovery Time

—

—

280

ns

Tj = 25°C, IF = 55A, di/dt ≤ 100A/µs

QRR

Reverse Recovery Charge

—

—

2.2

µCVDD ≤ 50V 

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

60

—

—

V

VGS = 0V, ID = 1.0 mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.68

—

V/°C

Reference to 25°C, ID = 1.0 mA

Voltage

RDS(on)

Static Drain-to-Source

—

—

0.020

VGS = 10V, ID = 40A

On-State Resistance

—

—

0.031

Ω

VGS = 10V, ID = 55A

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

20

—

—

S ( )VDS > 15V, IDS = 40A 

IDSS

Zero Gate Voltage Drain Current

—

—

25

VDS = 0.8 x Max Rating,VGS = 0V

—

—

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

39

—

88

VGS =10V, ID = 55A

Qgs

Gate-to-Source Charge

20

—

45

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain (“Miller”) Charge

34

—

105

see figures 6 and 13

td(on)

Turn-On Delay Time

—

—

33

VDD = 30V, ID = 55A,

tr

Rise Time

—

—

180

RG = 2.35Ω, VGS = 10V

td(off)

Turn-Off Delay Time

—

—

100

tf

Fall Time

—

—

100

see figure 10

LD

Internal Drain Inductance

—

2.0

—

LS

Internal Source Inductance

—

4.1

—

Ciss

Input Capacitance

—

1660

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

2000

—

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

—

340

—

see figure 5

IRFN054 Device



µA

nC

pF

nH

ns

Measured from the

drain lead, 6mm (0.25

in.) from package to

center of die.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Modified MOSFET

symbol showing the

internal inductances.

nA

A

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