IRFN054 datasheet(1/6 Pages) IRF

номер детали	IRFN054

подробное описание детали	POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*)

PDF	6 Pages

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производитель	IRF [International Rectifier]

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Product Summary

Part Number

BVDSS

RDS(on)

ID

IRFN054

60V

0.020

Ω

55A*

Features:

s

Avalanche Energy Rating

s

Dynamic dv/dt Rating

s

Simple Drive Requirements

s

Ease of Paralleling

s

Hermetically Sealed

s

Surface Mount

s

Light-weight

N-CHANNEL

Provisional Data Sheet No. PD-9.1543A

60 Volt, 0.020

Ω

Ω HEXFET

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry achieves very low on-

state resistance combined with high transconductance.

HEXFET transistors also feature all of the well-es-

tablish advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, and high energy pulse circuits.

The Surface Mount Device (SMD-1) package repre-

sents another step in the continual evolution of sur-

face mount technology. The SMD-1 will give

designers the extra flexibility they need to increase

circuit board density. International Rectifier has en-

gineered the SMD-1 package to meet the specific

needs of the power market by increasing the size of

the termination pads, thereby enhancing thermal and

electrical performance.

IRFN054

HEXFET® POWER MOSFET

Absolute Maximum Ratings

Parameter

IRFN054

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

55*

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

40

IDM

Pulsed Drain Current

256

PD @ TC = 25°C

Max. Power Dissipation

150

W

Linear Derating Factor

1.2

W/K

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

480

mJ

IAR

Avalanche Current

55

A

EAR

Repetitive Avalanche Energy

15

mJ

dv/dt

Peak Diode Recovery dv/dt

4.5

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 (for 5 seconds)

Weight

2.6 (typical)

g

oC

A

Next Data Sheet

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Аналогичный номер детали - IRFN054

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRFN054	219Kb / 7P	Simple Drive Requirements
Seme LAB	IRFN054SMD	23Kb / 2P	N-CHANNEL POWER MOSFET
International Rectifier	IRFN054	219Kb / 7P	Simple Drive Requirements

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Аналогичное описание - IRFN054

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRF5N3205	118Kb / 7P	POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.008ohm, Id=55A*)
	IRFN044	211Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=44A)
	IRFY044CM	281Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=16A*)
	IRFY440CM	300Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A)
	IRFZ44V	229Kb / 8P	Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A)
	IRFZ44VS	145Kb / 10P	Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A)
	JANTX2N6756	236Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14A)
	JANTX2N6760	234Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.00ohm, Id=5.5A)
	JANTX2N6782	232Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.60ohm, Id=3.5A)
	JANTX2N6786	230Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A)

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