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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7604 датащи(PDF) 2 Page - International Rectifier |
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IRF7604 датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7604 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.022 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.090 VGS = -4.5V, ID = -2.4A ––– ––– 0.13 VGS = -2.7V, ID = -1.2A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance 2.6 ––– ––– S VDS = -10V, ID = -1.2A ––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 13 20 ID = -2.4A Qgs Gate-to-Source Charge ––– 2.6 3.9 nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge ––– 5.6 9.0 VGS = -4.5V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 17 ––– VDD = -10V tr Rise Time ––– 53 ––– ID = -2.4A td(off) Turn-Off Delay Time ––– 31 ––– RG = 6.0Ω tf Fall Time ––– 38 ––– RD = 4.0Ω, See Fig. 10 Ciss Input Capacitance ––– 590 ––– VGS = 0V Coss Output Capacitance ––– 330 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5 Ω µA nA ns IGSS IDSS Drain-to-Source Leakage Current RDS(ON) Static Drain-to-Source On-Resistance Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -2.4A, di/dt ≤ -96A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.4A, VGS = 0V trr Reverse Recovery Time ––– 41 62 ns TJ = 25°C, IF = -2.4A Qrr Reverse Recovery Charge ––– 38 57 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A ––– ––– -19 ––– ––– -1.8 S D G Surface mounted on FR-4 board, t ≤ 10sec. |
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