IRF7604 datasheet(1/8 Pages) IRF

номер детали	IRF7604

подробное описание детали	Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm)

PDF	8 Pages

Scroll/Zoom	100%

производитель	IRF [International Rectifier]

домашняя страница	http://www.irf.com

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PD - 9.1263E

HEXFET® Power MOSFET

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VDSS = -20V

RDS(on) = 0.09Ω

Fifth

Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the

standard SO-8, provides the smallest footprint available in

an SOIC outline. This makes the Micro8 an ideal device for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro8 will allow

it to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards.

Mic ro 8

l Generation V Technology

l Ultra Low On-Resistance

l P-Channel MOSFET

l Very Small SOIC Package

l Low Profile (<1.1mm)

l Available in Tape & Reel

l Fast Switching

IRF7604

12/9/97

Description

Parameter

Max.

Units

ID @ TA = 25°C

Continuous Drain Current, VGS @ -4.5V

-3.6

ID @ TA = 70°C

Continuous Drain Current, VGS @ -4.5V

-2.9

A

IDM

Pulsed Drain Current

-19

PD @TA = 25°C

Power Dissipation

1.8

W

Linear Derating Factor

14

mW/°C

VGS

Gate-to-Source Voltage

± 12

V

dv/dt

Peak Diode Recovery dv/dt

-5.0

V/ns

TJ,TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

Parameter

Typ.

Max.

Units

RθJA

Maximum Junction-to-Ambient

–––

70

°C/W

Thermal Resistance

Аналогичный номер детали - IRF7604

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRF7604PBF	508Kb / 8P	HEXFET POWER MOSFET ( VDSS = -20V , RDS(on) = 0.09廓 )

More results

Аналогичное описание - IRF7604

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRF5850	126Kb / 9P	Power MOSFET(Vdss=-20V, Rds(on)=0.135ohm)
	IRF7401	118Kb / 9P	Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)
	IRF7451	209Kb / 8P	Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A)
	IRF7504	115Kb / 8P	Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm)
	IRF7530	83Kb / 8P	Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)
	IRF7555	71Kb / 7P	Power MOSFET(Vdss=-20V, Rds(on)=0.055ohm)
	IRF7606	102Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm)
	IRF7607	77Kb / 8P	Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)
	IRF7663	77Kb / 7P	Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm)
	IRF7750	110Kb / 7P	Power MOSFET(Vdss=-20V, Rds(on)=0.030ohm)

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