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IR2153 датащи(PDF) 2 Page - International Rectifier

номер детали IR2153
подробное описание детали  SELF-OSCILLATING HALF-BRIDGE DRIVER
PDF  9 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IR2153 датащи(HTML) 2 Page - International Rectifier

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IR2153(D)(S) & (PbF)
2
www.irf.com
Note 1:
This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the VCLAMP specified in the Electrical Characteristics section.
Note 2:
Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by
more than 5V.
Note 3:
Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the
voltage at this pin.
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
Definition
Min.
Max.
Units
VBs
High side floating supply voltage
VCC - 0.7
VCLAMP
VS
Steady state high side floating supply offset voltage
-3.0 (note 2)
600
VCC
Supply voltage
10
VCLAMP
ICC
Supply current
(note 3)
5
mA
TJ
Junction temperature
-40
125
°C
V
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Min.
Max.
Units
VB
High side floating supply voltage
-0.3
625
VS
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VLO
Low side output voltage
-0.3
VCC + 0.3
VRT
RT pin voltage
-0.3
VCC + 0.3
VCT
CT pin voltage
-0.3
VCC + 0.3
ICC
Supply current (note 1)
25
IRT
RT pin current
-5
5
dVs/dt
Allowable offset voltage slew rate
-50
50
V/ns
PD
Maximum power dissipation @ TA ≤ +25°C
(8 Lead DIP)
1.0
(8 Lead SOIC)
0.625
RthJA
Thermal resistance, junction to ambient
(8 Lead DIP)
125
(8 Lead SOIC)
200
TJ
Junction temperature
-55
150
TS
Storage temperature
-55
150
°C
TL
Lead temperature (soldering, 10 seconds)
300
V
°C/W
W
mA



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