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IR2153 датащи(PDF) 1 Page - International Rectifier

номер детали IR2153
подробное описание детали  SELF-OSCILLATING HALF-BRIDGE DRIVER
PDF  9 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IR2153 датащи(HTML) 1 Page - International Rectifier

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Features
Integrated 600V half-bridge gate driver
15.6V zener clamp on Vcc
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Shutdown feature (1/6th Vcc) on CT pin
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with RT
Internal50nsec(typ.)bootstrapdiode(IR2153D)
Excellentlatchimmunityonallinputsandoutputs
ESD protection on all leads
Also available LEAD-FREE
Preliminary Data Sheet No. PD60062 revM
SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
VOFFSET
600V max.
Duty Cycle
50%
Tr/Tp
80/40ns
Vclamp
15.6V
Deadtime (typ.)
1.2
µs
Typical Connections
VB
HO
VS
LO
VCC
RT
CT
COM
600V
MAX
Shutdown
IR2153(S)
IR2153D
VB
HO
VS
LO
VCC
RT
CT
COM
600V
MAX
Shutdown
IR2153(D)(S)&(PbF)
Description
The IR2153D(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and incor-
porates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS
555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature
has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control
signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout
threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup.
Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by
increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing
the latch immunity of the device, and providing comprehensive ESD protection on all pins.
www.irf.com
1
Packages
8 Lead PDIP
8 Lead SOIC


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